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Duc Quang Hoang

Lecturer - Researcher

Biography and Research interests

Duc-Quang HOANG was born in Hà Tây province, Vietnam where he completed his high school education in 1996 at Bat-Bat high school. He completed his B.S. degree in Solid State Physics at Hanoi National University, Hanoi, Vietnam (1996–2000). He did his Master of Science (MSc.) & Master of Science by Research (MSc.[R]) in Nano-magnetism & Condensed Matter Physics at Chungbuk National University, Korea (2002–2005) and University of Glasgow, UK (2007–2011), respectively. He also worked at Korea Institute of Science & Technology (KIST), Korea (2003) and Department of Electronic Engineering, Tohoku University, Japan (2006). Quang moved to the Wide Band-Gap Materials (WBGM) research group leading by Prof. Ken Haenen, Institute for Materials Research (IMO), Hasselt University & IMOMEC, IMEC vzw, Belgium for his PhD degree (2012–2017).

Returning Vietnam after 15 years abroad, Quang participated Ton Duc Thang University (TDTU), Vietnam since May 2017 as an independent researcher. His expertise links to materials science where he received high-level trainings in condensed matter physics and nanotechnology at the Kelvin laboratory, University of Glasgow, UK (2007-2011) and 2D material fabrication using RF sputtering at IMO, Hasselt University, Belgium (2012-2017). Quang proficiently used the Lorentz transmission electron microscopy (LTEM) and other advanced characterization techniques associated with LTEM, i.e. patterning NiFe nanowires with focused ion beam (FIB) technique, evaporating NiFe thin films on Si3N4-TEM membranes with thermal evaporator for the LTEM characterization, cross-sectioning TEM specimens with gentle ion milling techniques using low ion beam energies. Quang has authored over 30 peer-reviewed publications.

Since May 2021, Quang upgraded to lecturer at TDTU at which his research interests focus on ferromagnetic nanowires and 2D materials (hBN, graphene), including their fabrication/deposition, LTEM/HRTEM characterization, and LTEM spintronic-devices. Based on those experiences working in science and technology from various countries - Korea, Japan, UK, Belgium, Quang expects to open a new research group of low dimensional nanomaterials at TDTU where he is looking forward doing some significant things in applied science to gain more experiences in both doing research and supervising students at the higher education level. Such scientific activities enable him to become a professional level in future.

Fields of interesting
 

  • Materials science/ engineering

  • Semiconducting nanomaterials

  • Ceramic magnetic materials

  • Magnetic tunneling junctions

  • Magnetic imaging techniques

  • Condensed matter physics
     

Experiences
 

  • 2017-present: working at Ton Duc Thang University, Vietnam

  • 2012-2017: worked at Institute of Materials Science (IMO), IMOMEC Hasselt University and IMEC vzw, Belgium

  • 2007-2011: worked at School of Physics and Astronomy, Scottish and Universities Physics Alliance (SUPA), University of Glasgow, UK

  • 2005-2007: worked at Department of Physics, CBNU, Korea and Department of Electronic Engineering, Tohoku University, Japan

  • 2002-2005: MSc. at Department of Physics, CBNU, Korea and Institute of Science & Technology (KIST), Korea

  • 2000-2001: worked at Department of Physics, College of Natural Science, Hanoi National University, Vietnam

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Quang's research activities

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Depositing hBN thin films using an unbalanced RF sputtering

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(a) A schematic of B-defects that might occur in a 2D hBN monolayer. (b) A 10.5 nm-thick curved nanowire was designed where head-to-head and tail-to-tail TDWs are intentionally created at two curvatures of the designed nanowire. (c) An OOMMF image of 21 nm-thick straight nanowire shows spins in/out-side a created VDW and its color ones. (d) The OOMMF, FIB/SEM and Fresnel images of a domain wall trap structure where a TDW was created and pinned in the first corner of the simulated structure; the designed structure was patterned with FIB and its FIB/SEM image is shown; a typical Fresnel image of the said nanowire is also given where a VDW was created at the first corner of the said structure when a creation field of 0.7 T was applied about the angle of 60° with respect to the easy-axes of the two horizontal nanowires

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Contact

Ton Duc Thang University, 19
Nguyen Huu Tho, District 7

Ho Chi Minh City 700 000, Vietnam

ORCID: 0000-0003-3026-9839

Official homepage at university here

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